RAM - Lenovo Intel Optane Persistent Memory 200 Series - 4ZC7A08736
Varenummer: 3212019  
 

Lenovo Intel Optane Persistent Memory 200 Series

DDR-T, modul, 512 GB, DIMM 288-pin, 3200 MHz / PC4-25600, 1.2 V, for ThinkSystem SR850 V2 7D31, 7D32, 7D33; SR860 V2 7D42, 7Z59, 7Z60

336 681,00 kr 269 344,80 kr eksl. mva
Gratis frakt (privatkunde)
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The Lenovo Intel Optane Persistent Memory 200 Series represents a significant advancement in RAM technology. Designed specifically for data centers and high-demand systems, this memory module combines a substantial 512 GB storage capacity with the innovative 3D XPoint Technology to deliver not just speed but also endurance. Operating at a swift 3200 MHz and utilizing DDR-T technology, it ensures that systems can handle large datasets and complex applications with ease. Furthermore, its compatibility with DIMM 288-pin slots and design for Lenovo systems makes it an ideal upgrade for enhancing system performance while maintaining energy efficiency with a low supply voltage of 1.2 V. Whether it's for upgrading enterprise servers or boosting high-performance computing platforms, the Lenovo Intel Optane Persistent Memory 200 Series stands out as a smart, system-specific solution.

Produsent
Varenummer
3212019
Model
4ZC7A08736
Til produsentens hjemmeside
Produktbeskrivelse
Intel Optane Persistent Memory 200 Series - DDR-T - modul - 512 GB - DIMM 288-pin - 3200 MHz / PC4-25600
Produkttype
Minnemodul
Kapasitet
512 GB
Minnetype
DDR-T - DIMM 288-pin
Oppgraderingstype
Systemspesifikk
Hastighet
3200 MHz (PC4-25600)
Egenskaper
3D XPoint Technology, Data Center Persistant Memory
Spenning
1.2 V
Tilsvarende OEM-fabrikant-delnummer
Lenovo 4ZC7A08736
Designet for
ThinkSystem SR850 V2 7D31, 7D32, 7D33; SR860 V2 7D42, 7Z59, 7Z60

Generelt

Kapasitet
512 GB
Oppgraderingstype
Systemspesifikk
Tilsvarende OEM-fabrikant-delnummer
Lenovo 4ZC7A08736

Minne

Type
DCPMM minnemodul
Teknologi
DDR-T
Produktformfaktor
DIMM 288-pin
Hastighet
3200 MHz (PC4-25600)
Egenskaper
3D XPoint Technology, Data Center Persistant Memory
Spenning
1.2 V

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